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IXTH30N60P - LITTELFUSE

Description: Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD

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Symbol
IXTH30N60P - LITTELFUSE - PCB symbol
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PCB Footprints
IXTH30N60P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
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3D Models
IXTH30N60P - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
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IXTH30N60P Details

  • Manufacturer Part Number:

    IXTH30N60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    53 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXTH30N60P Frequently Asked Questions (FAQs)

  • The maximum operating temperature for the IXTH30N60P is 175°C, but it's recommended to operate it at a maximum of 150°C for optimal performance and reliability.
  • Proper cooling can be achieved by mounting the device on a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. Additionally, the PCB design should allow for good thermal conductivity and minimal thermal resistance.
  • The maximum voltage that can be applied to the IXTH30N60P is 600V, but it's recommended to operate it at a maximum of 500V to ensure reliable operation and to prevent damage to the device.
  • To protect the IXTH30N60P from overvoltage and overcurrent conditions, it's recommended to use a voltage regulator or a voltage clamp to limit the voltage, and a current limiter or a fuse to limit the current. Additionally, a varistor or a TVS diode can be used to protect the device from transient voltage surges.
  • The maximum current that can be handled by the IXTH30N60P is 30A, but it's recommended to operate it at a maximum of 20A to ensure reliable operation and to prevent damage to the device.

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IXTH30N60P Overview

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IXTH30N60P Alternates

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Image Part Number Model
Part Image IXTH30N60L2 Littelfuse Inc

Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Part Image IXFH30N60P Littelfuse Inc

Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Part Image IXTH30N60L2 IXYS Corporation

Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IXFH30N60P IXYS Corporation

Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD