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IXTH80N20L - LITTELFUSE

Description: Trans MOSFET N-CH 200V 80A 3-Pin(3+Tab) TO-247

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PCB Footprints
IXTH80N20L - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_2022
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3D Models
IXTH80N20L - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247_2022
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IXTH80N20L Details

  • Manufacturer Part Number:

    IXTH80N20L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    520 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    520 W

  • Pulsed Drain Current-Max (IDM):

    340 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTH80N20L Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH80N20L is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXTH80N20L is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the airflow and ambient temperature in your design.
  • The maximum allowed case temperature for the IXTH80N20L is 150°C, but it's recommended to keep the case temperature below 125°C for reliable operation and to prevent thermal runaway.
  • Yes, you can parallel multiple IXTH80N20L devices to increase the current rating, but it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal gradients.

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IXTH80N20L Overview

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