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IXTH80N65X2 - LITTELFUSE

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IXTH80N65X2 Details

  • Manufacturer Part Number:

    IXTH80N65X2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    890 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTH80N65X2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IXTH80N65X2 is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
  • To ensure proper cooling, follow the thermal management guidelines in the datasheet. Ensure good airflow around the device, and consider using a heat sink or thermal interface material to reduce thermal resistance. Additionally, keep the device away from other heat sources and ensure the PCB is designed to dissipate heat efficiently.
  • The recommended gate drive voltage for the IXTH80N65X2 is between 10V and 15V, as specified in the datasheet. However, it's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device or affect its performance.
  • Yes, you can use multiple IXTH80N65X2 devices in parallel to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.
  • The maximum allowed voltage transient for the IXTH80N65X2 is specified in the datasheet as 80V. However, it's essential to ensure that the device is protected from voltage transients exceeding this value to prevent damage or affect its performance.

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IXTH80N65X2 Overview

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