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IXTK120N25P - LITTELFUSE

Description: N-Channel 250 V 120A (Tc) 700W (Tc) Through Hole TO-264 (IXTK) , 8000 pF , -55°C ~ 175°C , TO-264-3

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Symbol
IXTK120N25P - LITTELFUSE - PCB symbol
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PCB Footprints
IXTK120N25P - LITTELFUSE PCB footprint - Other - Other - TO-264 (IXTK)_2025-1.1
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3D Models
IXTK120N25P - LITTELFUSE - 3D model - Other - TO-264 (IXTK)_2025-1.1
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IXTK120N25P Details

  • Manufacturer Part Number:

    IXTK120N25P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    700 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTK120N25P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTK120N25P is a standard TO-247 package with a minimum pad size of 5.5mm x 3.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliable operation of the IXTK120N25P in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The maximum allowed voltage transient for the IXTK120N25P is 400V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, the IXTK120N25P can be used in a parallel configuration to increase current handling, but it is recommended to follow proper design and layout guidelines to ensure equal current sharing and to minimize thermal and electrical stresses.
  • The recommended gate drive voltage for the IXTK120N25P is 10V to 15V, as specified in the datasheet. Using a higher gate drive voltage may improve switching performance, but may also increase power losses.

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IXTK120N25P Overview

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