- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXTK180N15P
- Part Number IXTK180N15P
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - GJM1555C1HR80BB01D
- Released Date Jan 2, 2020
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXTK180N15P Details
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Manufacturer Part Number:
IXTK180N15P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
5.3
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
4000 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
100 V
IXTK180N15P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the IXTK180N15P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
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While the IXTK180N15P is a power MOSFET, it's not optimized for high-frequency switching applications. The device has a relatively high gate charge (Qg) and output capacitance (Coss), which can lead to increased switching losses and ringing. For high-frequency applications, consider using a MOSFET with lower Qg and Coss, such as the IXFN180N15P.
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To ensure proper cooling, follow these guidelines: 1) Use a heat sink with a thermal resistance of ≤ 1°C/W, 2) Apply a thermal interface material (TIM) with a thermal conductivity of ≥ 5 W/m-K, 3) Ensure good airflow around the heat sink, and 4) Keep the junction temperature (Tj) below the maximum rated value of 150°C. You can use thermal simulation tools or consult with a thermal expert to optimize your design.
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Yes, you can parallel multiple IXTK180N15P devices to increase current handling, but it's crucial to ensure that each device is properly matched and has a similar thermal environment. You should also consider the increased gate drive requirements and potential oscillations due to the increased capacitance. It's recommended to consult with an experienced power electronics engineer to ensure a reliable and efficient design.
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The recommended gate drive voltage for the IXTK180N15P is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance (Rds(on)) and improve the device's performance, but it also increases the gate charge and potential oscillations. A lower gate drive voltage can reduce the gate charge but may increase Rds(on) and affect the device's performance.
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IXTK180N15P Overview
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