Part Image

IXTK8N150L - LITTELFUSE

Description: MOFSET N-Channel 8A (Tc) 700W (Tc) Through Hole TO-264 (IXTK)

Download IXTK8N150L Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IXTK8N150L - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264 (IXTK)
click to zoom
3D Models
IXTK8N150L - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-264 (IXTK)
click to zoom

IXTK8N150L Details

  • Manufacturer Part Number:

    IXTK8N150L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.2

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1500 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    3.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    700 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTK8N150L Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTK8N150L is a TO-220 package with a minimum pad size of 70 mils x 70 mils and a thermal pad size of 100 mils x 100 mils.
  • Yes, IXTK8N150L is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range.
  • Yes, you can parallel multiple IXTK8N150L devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.
  • The recommended gate drive voltage for IXTK8N150L is between 10 V and 15 V, with a minimum gate drive current of 1 A to ensure reliable switching.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXTK8N150L Overview

Use the download button to access the IXTK8N150L schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTK8, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXTK8N150L

Showing 0 results