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IXTN17N120L - LITTELFUSE

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IXTN17N120L - LITTELFUSE  - 3D model
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IXTN17N120L Details

  • Manufacturer Part Number:

    IXTN17N120L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-227B, 4 PIN

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.4

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTN17N120L Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTN17N120L is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXTN17N120L is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times.
  • To ensure reliable operation of IXTN17N120L in high-temperature environments, it is recommended to derate the device's power handling capability according to the temperature derating curve provided in the datasheet.
  • The recommended gate drive voltage for IXTN17N120L is between 10V and 15V to ensure reliable switching and minimize power losses.
  • Yes, IXTN17N120L can be used in a parallel configuration to increase current handling capability, but it is recommended to ensure that the devices are matched in terms of their electrical characteristics and thermal performance.

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IXTN17N120L Overview

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