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IXTP110N055T2 - LITTELFUSE

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IXTP110N055T2 Details

  • Manufacturer Part Number:

    IXTP110N055T2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.1

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    105 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTP110N055T2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTP110N055T2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • While the IXTP110N055T2 is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 kHz with proper PCB layout and design considerations. However, it's essential to consult with Littelfuse's application engineers for specific guidance.
  • To ensure the reliability of the IXTP110N055T2 in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • Yes, the IXTP110N055T2 can be paralleled for higher current applications, but it's crucial to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal gradients.
  • The IXTP110N055T2 should be stored in a dry, cool place, away from direct sunlight and moisture. It's essential to handle the device by the body, avoiding touching the leads or die, and to use anti-static wrist straps or mats to prevent electrostatic discharge damage.

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IXTP110N055T2 Overview

Use the download button to access the IXTP110N055T2 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTP1, or try a keyword search, such as Power Field-Effect Transistors

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