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IXTP170N075T2 - LITTELFUSE

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IXTP170N075T2 Details

  • Manufacturer Part Number:

    IXTP170N075T2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    170 A

  • Drain-source On Resistance-Max:

    0.0054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    148 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    360 W

  • Pulsed Drain Current-Max (IDM):

    510 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTP170N075T2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTP170N075T2 is a standard TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • Yes, IXTP170N075T2 is a high-reliability device that meets the requirements of AEC-Q101, making it suitable for use in automotive and other high-reliability applications.
  • To ensure the thermal performance of IXTP170N075T2, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W and to ensure good thermal contact between the device and the heat sink.
  • The maximum junction temperature of IXTP170N075T2 is 150°C, but it is recommended to operate the device at a junction temperature of less than 125°C for optimal performance and reliability.
  • Yes, IXTP170N075T2 can be used in a parallel configuration to increase the current handling capability, but it is recommended to ensure that the devices are matched and that the thermal performance is adequate.

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IXTP170N075T2 Overview

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Part Image IXTP170N075T2 IXYS Corporation

Power Field-Effect Transistor, 170A I(D), 75V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB