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IXTP60N20T - LITTELFUSE

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IXTP60N20T - LITTELFUSE  - 3D model
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IXTP60N20T Details

  • Manufacturer Part Number:

    IXTP60N20T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    72 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTP60N20T Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IXTP60N20T is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
  • To ensure proper cooling, follow the recommended thermal design guidelines in the datasheet. This includes providing adequate heat sinking, using thermal interface materials, and maintaining a safe distance from other heat sources. Additionally, consider using thermal simulation tools to optimize your design.
  • The recommended gate drive voltage for the IXTP60N20T is between 10V and 15V, as specified in the datasheet. However, it's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.
  • Yes, the IXTP60N20T is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and parasitic inductances when designing your application.
  • To protect the IXTP60N20T from overvoltage and overcurrent conditions, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit in your design. Additionally, consider using a fuse or a current limiting device to prevent damage from excessive currents.

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IXTP60N20T Overview

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