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IXTP6N100D2 - LITTELFUSE

Description: -55°C ~ 150°C N-Channel 1000 V 6A (Tc) 300W (Tc) Through Hole TO-220-3

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Symbol
IXTP6N100D2 - LITTELFUSE - PCB symbol
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PCB Footprints
IXTP6N100D2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 (IXTP)_2023
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3D Models
IXTP6N100D2 - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-220 (IXTP)_2023
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IXTP6N100D2 Details

  • Manufacturer Part Number:

    IXTP6N100D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    2.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    41 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTP6N100D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTP6N100D2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXTP6N100D2 is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times.
  • To ensure reliable operation of IXTP6N100D2 in high-temperature environments, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W and to keep the junction temperature below 150°C.
  • The maximum allowed voltage transient for IXTP6N100D2 is 120% of the rated voltage (600V) for a duration of less than 10ms.
  • Yes, multiple IXTP6N100D2 devices can be paralleled to increase current handling, but it is recommended to use a current-sharing scheme to ensure equal current distribution among the devices.

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IXTP6N100D2 Overview

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