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IXTQ22N50P - LITTELFUSE

Description: N-Channel 500 V 22A (Tc) 350W (Tc) Through Hole TO-3P

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Symbol
IXTQ22N50P - LITTELFUSE - PCB symbol
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PCB Footprints
IXTQ22N50P - LITTELFUSE PCB footprint - Other - Other - TO-3P (IXTQ)
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3D Models
IXTQ22N50P - LITTELFUSE - 3D model - Other - TO-3P (IXTQ)
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IXTQ22N50P Details

  • Manufacturer Part Number:

    IXTQ22N50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-3P, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.95

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    750 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    350 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTQ22N50P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTQ22N50P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXTQ22N50P is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times.
  • To ensure reliable operation of IXTQ22N50P in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 1°C per 1000 feet of altitude and to use a suitable heat sink to maintain a junction temperature below 150°C.
  • The recommended gate drive voltage for IXTQ22N50P is between 10V and 15V to ensure reliable switching and minimize power losses.
  • Yes, IXTQ22N50P can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are matched in terms of threshold voltage and on-state resistance to minimize current imbalance and reduce the risk of thermal runaway.

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IXTQ22N50P Overview

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