- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXTQ26N50P
- Part Number IXTQ26N50P
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - IXTQ26N50P*1
- Released Date Nov 2, 2021
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXTQ26N50P Details
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Manufacturer Part Number:
IXTQ26N50P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
5.95
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
1000 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
500 V
IXTQ26N50P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for IXTQ26N50P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes.
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To ensure the reliability of IXTQ26N50P in high-temperature applications, it's essential to follow the recommended operating temperature range (-40°C to 150°C), use a suitable heat sink, and ensure proper thermal management. Additionally, consider using a thermally conductive interface material and follow the manufacturer's guidelines for soldering and assembly.
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While IXTQ26N50P is a power MOSFET, it's not optimized for high-frequency switching applications. The device has a relatively high gate charge and input capacitance, which can lead to high switching losses and reduced efficiency. For high-frequency switching applications, consider using a MOSFET with a lower gate charge and input capacitance, such as the IXFN26N50P.
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To protect IXTQ26N50P from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. During assembly, ensure that the device is handled by ESD-trained personnel, and use ESD-protected workstations and tools. Additionally, consider using ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design.
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Yes, IXTQ26N50P can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Additionally, consider the increased power dissipation and thermal management requirements when using multiple devices in parallel.
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IXTQ26N50P Overview
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