- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXTQ69N30P
- Part Number IXTQ69N30P
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - TO-3P (IXTQ)
- Released Date Jul 9, 2021
- Last Modified Date Nov 17, 2023 6:25 AM UTC
- Pinout / Pin List Click Here (Member Only)
IXTQ69N30P Details
-
Manufacturer Part Number:
IXTQ69N30P
-
Rohs Code:
Yes
-
Part Life Cycle Code:
Active
-
ECCN Code:
EAR99
-
Manufacturer:
Littelfuse Inc
-
YTEOL:
6.22
-
Additional Feature:
AVALANCHE RATED
-
Avalanche Energy Rating (Eas):
1500 mJ
-
Case Connection:
DRAIN
-
Configuration:
SINGLE WITH BUILT-IN DIODE
-
DS Breakdown Voltage-Min:
300 V
IXTQ69N30P Frequently Asked Questions (FAQs)
-
The recommended PCB footprint for the IXTQ69N30P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes.
-
While the IXTQ69N30P is a power MOSFET, it's not optimized for high-frequency switching applications. The device has a relatively high gate charge (Qg) and output capacitance (Coss), which can lead to increased switching losses and reduced efficiency at high frequencies. For high-frequency switching applications, consider using a MOSFET with lower Qg and Coss, such as the IXFN82N30P.
-
To ensure proper thermal management, follow these guidelines: 1) Use a heat sink with a thermal resistance of ≤ 1°C/W, 2) Apply a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K, 3) Ensure good airflow around the heat sink, and 4) Keep the junction temperature (Tj) below the maximum rated value of 150°C. Refer to the datasheet or application notes for more detailed thermal management guidelines.
-
Yes, you can parallel multiple IXTQ69N30P devices to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased gate capacitance. Additionally, consider the thermal management implications of paralleling devices, as the total power dissipation will increase. Consult the datasheet or application notes for more information on paralleling MOSFETs.
-
The recommended gate drive voltage for the IXTQ69N30P is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance (Rds(on)) and improve the device's switching performance, but it also increases the gate charge and potential for oscillations. Consult the datasheet or application notes for more information on gate drive circuitry design.
Trust Checks
Community Provided
System Verified
Community Approved
IXTQ69N30P Overview
Use the download button to access the IXTQ69N30P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTQ6,
or try a keyword search, such as Power Field-Effect Transistors
Suggested Parts
If you searched for IXTQ69N30P, you might also be interested in these parts:
| Part Number |
|---|
| DSEI30-06A |
| HCPL2601 |
| IXFR140N30P |
| MJW21193G |
| MJW21194G |
| NJW21194G |
| STY60NK30Z |
| HCPL2601SD |
| 2SC4495 |