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IXTT10N100D2 - LITTELFUSE

Description: N-Channel, Depletion Mode 1000 V 10A (Tc) 695W (Tc) Surface Mount TO-268AA , -55°C ~ 150°C (TJ)

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IXTT10N100D2 - LITTELFUSE - PCB symbol
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PCB Footprints
IXTT10N100D2 - LITTELFUSE PCB footprint - Other - Other - TO-268 (IXTT)_2025-1.3
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IXTT10N100D2 - LITTELFUSE - 3D model - Other - TO-268 (IXTT)_2025-1.3
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IXTT10N100D2 Details

  • Manufacturer Part Number:

    IXTT10N100D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    695 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTT10N100D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTT10N100D2 is a standard TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXTT10N100D2 is designed for high-reliability applications and meets the requirements of AEC-Q101, a standard for automotive-grade components.
  • To ensure proper soldering, follow the recommended soldering profile of 260°C for 10 seconds, and use a solder with a melting point of 217°C to 220°C. Also, ensure the PCB is clean and free of oxidation.
  • The maximum allowed voltage transient for the IXTT10N100D2 is 1200V, as specified in the datasheet. Exceeding this value may damage the device.
  • Yes, the IXTT10N100D2 can be used in a parallel configuration to increase current handling, but ensure that the devices are properly matched and the thermal management is adequate to prevent overheating.

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IXTT10N100D2 Overview

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IXTT10N100D2 Alternates

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Image Part Number Model
Part Image IXTT10N100D IXYS Corporation

Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA
Part Image IXTT10N100D2 IXYS Corporation

Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA
Part Image IXTT10N100D Littelfuse Inc

Power Field-Effect Transistor, 10A I(D), 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA