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IXTT110N10L2 - LITTELFUSE

Description: MOSFET Linear Extended FBSOA Power MOSFET

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PCB Footprints
IXTT110N10L2 - LITTELFUSE PCB footprint - Other - Other - IXTT16N20D2
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3D Models
IXTT110N10L2 - LITTELFUSE  - 3D model - Other - IXTT16N20D2
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IXTT110N10L2 Details

  • Manufacturer Part Number:

    IXTT110N10L2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.85

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    600 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTT110N10L2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTT110N10L2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm. It's recommended to follow the manufacturer's recommended land pattern for optimal thermal performance.
  • To ensure proper cooling, it's recommended to attach a heat sink to the device, and ensure good airflow around the component. The heat sink should be designed to provide a thermal resistance of less than 10°C/W. Additionally, the PCB should be designed to provide good thermal conduction paths to the heat sink.
  • The maximum allowed voltage transient for the IXTT110N10L2 is 1.5 times the maximum rated voltage (Vdrm) for a duration of less than 10ms. It's recommended to use a TVS diode or a voltage clamp to protect the device from voltage transients.
  • Yes, the IXTT110N10L2 is designed for high-reliability applications. It's manufactured using a proprietary process that ensures high reliability and low defect rates. However, it's recommended to follow the manufacturer's recommended derating guidelines and to perform thorough testing and validation for the specific application.
  • The IXTT110N10L2 has an internal ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding straps, and ionizers to minimize the risk of ESD damage.

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IXTT110N10L2 Overview

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