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IXTT16P60P - LITTELFUSE

Description: Trans MOSFET P-CH 600V 16A 3-Pin(2+Tab) TO-268

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PCB Footprints
IXTT16P60P - LITTELFUSE PCB footprint - Other - Other - TO-268_2021
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IXTT16P60P Details

  • Manufacturer Part Number:

    IXTT16P60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.25

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.72 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    460 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    98 ns

  • Turn-on Time-Max (ton):

    54 ns

IXTT16P60P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTT16P60P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXTT16P60P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range.
  • Yes, you can parallel multiple IXTT16P60P devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal gradients.
  • The recommended gate drive voltage for IXTT16P60P is between 10V and 15V, with a minimum gate drive current of 1A to ensure reliable switching.

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IXTT16P60P Overview

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