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IXTT220N20X4HV - LITTELFUSE

Description: MOSFET Discrete MOSFET 220A 200V X4 TO268HV

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PCB Footprints
IXTT220N20X4HV - LITTELFUSE PCB footprint - Other - Other - TO-268HV_2
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3D Models
IXTT220N20X4HV - LITTELFUSE  - 3D model - Other - TO-268HV_2
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IXTT220N20X4HV Details

  • Manufacturer Part Number:

    IXTT220N20X4HV

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.2

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    900 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    220 A

  • Drain-source On Resistance-Max:

    0.0055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.4 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    800 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTT220N20X4HV Frequently Asked Questions (FAQs)

  • The recommended mounting torque for the IXTT220N20X4HV is 10-15 in-lbs (1.1-1.7 Nm) for the screw terminals and 15-20 in-lbs (1.7-2.3 Nm) for the nut and washer.
  • While the IXTT220N20X4HV is designed for high-voltage applications, it is not recommended for high-frequency switching applications due to its relatively high switching losses and limited di/dt capability. For high-frequency applications, consider using a thyristor with a faster switching time and lower switching losses.
  • To ensure reliable operation of the IXTT220N20X4HV in a high-temperature environment, make sure to follow the recommended derating curves for voltage and current, and provide adequate heat sinking to keep the junction temperature below the maximum rated value of 125°C. Additionally, consider using a thermal interface material to improve heat transfer between the device and the heat sink.
  • The recommended gate drive circuit for the IXTT220N20X4HV typically consists of a gate resistor (RG) in series with a gate capacitor (CG) to provide a controlled gate current and voltage. The values of RG and CG depend on the specific application requirements, but a typical value for RG is 10-20 ohms and for CG is 10-100 nF.
  • Yes, the IXTT220N20X4HV can be used in a parallel configuration to increase current handling, but it is essential to ensure that the devices are matched in terms of their electrical characteristics and that the gate drive circuits are properly synchronized to prevent uneven current sharing. Additionally, consider using a common gate drive circuit and a single current sense resistor to monitor the total current.

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IXTT220N20X4HV Overview

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