Part Image

IXTT2N170D2 - LITTELFUSE

Description: N-Channel, Depletion Mode 1700 V 2A (Tj) 568W (Tc) Surface Mount TO-268AA

Download IXTT2N170D2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IXTT2N170D2 - LITTELFUSE PCB footprint - Other - Other - TO-268 (IXTT)_2025-1.5
click to zoom
3D Models
IXTT2N170D2 - LITTELFUSE  - 3D model - Other - TO-268 (IXTT)_2025-1.5
click to zoom

IXTT2N170D2 Details

  • Manufacturer Part Number:

    IXTT2N170D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    6.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    80 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    568 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTT2N170D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTT2N170D2 is a standard TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • Yes, the IXTT2N170D2 is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times.
  • To ensure reliable operation of the IXTT2N170D2 in high-temperature environments, it is recommended to use a heat sink with a thermal resistance of less than 10°C/W and to keep the junction temperature below 150°C.
  • The maximum allowed voltage transient for the IXTT2N170D2 is 200V for a duration of less than 10ms, as specified in the datasheet.
  • Yes, the IXTT2N170D2 can be paralleled to increase current handling, but it is recommended to use a current sharing scheme to ensure equal current distribution and to avoid thermal runaway.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXTT2N170D2 Overview

Use the download button to access the IXTT2N170D2 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTT2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXTT2N170D2

Showing 0 results