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IXTX200N10L2 - LITTELFUSE

Description: Trans MOSFET N-CH 100V 200A 3-Pin(3+Tab) ISOPLUS 247

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PCB Footprints
IXTX200N10L2 - LITTELFUSE PCB footprint - Other - Other - IXTX200N10L2-2
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IXTX200N10L2 - LITTELFUSE  - 3D model - Other - IXTX200N10L2-2
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IXTX200N10L2 Details

  • Manufacturer Part Number:

    IXTX200N10L2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    610 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1040 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTX200N10L2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTX200N10L2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 10°C/W. The heat sink should be mounted to the device using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the device to prevent thermal hotspots.
  • The IXTX200N10L2 is designed to withstand voltage transients up to 1.5 times the maximum rated voltage (200V) for a duration of up to 100ms. However, it's recommended to limit voltage transients to 1.2 times the maximum rated voltage to ensure reliable operation.
  • While the IXTX200N10L2 is primarily designed for low-frequency applications, it can be used in high-frequency switching applications up to 100kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation.
  • To protect the IXTX200N10L2 from EOS, it's recommended to use a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) in parallel with the device. Additionally, ensure that the device is operated within its recommended voltage and current ratings, and that the PCB design includes adequate clearance and creepage distances to prevent electrical overstress.

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IXTX200N10L2 Overview

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