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IXTX20N150 - LITTELFUSE

Description: MOSFET 1500 V High Voltage Power

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Symbol
IXTX20N150 - LITTELFUSE - PCB symbol
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PCB Footprints
IXTX20N150 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PLUS 247TM Outline
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3D Models
IXTX20N150 - LITTELFUSE - 3D model - Transistor Outline, Vertical - PLUS 247TM Outline
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IXTX20N150 Details

  • Manufacturer Part Number:

    IXTX20N150

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    163 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1250 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTX20N150 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTX20N150 is a TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 5mm x 5mm.
  • Yes, IXTX20N150 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range.
  • The maximum allowed voltage transient for IXTX20N150 is 150% of the rated voltage (150V) for a duration of less than 10ms. Exceeding this limit may damage the device.
  • Yes, you can parallel multiple IXTX20N150 devices to increase current handling, but it's essential to ensure that each device has its own gate drive circuitry and that the devices are properly matched to avoid current imbalance and thermal runaway.

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IXTX20N150 Overview

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