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IXTY2N100P - LITTELFUSE

Description: Trans MOSFET N-CH 1KV 2A 3-Pin(2+Tab) DPAK

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Symbol
IXTY2N100P - LITTELFUSE - PCB symbol
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PCB Footprints
IXTY2N100P - LITTELFUSE PCB footprint - Other - Other - IXTY2N100P-1
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IXTY2N100P - LITTELFUSE - 3D model - Other - IXTY2N100P-1
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IXTY2N100P Details

  • Manufacturer Part Number:

    IXTY2N100P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    7.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    86 W

  • Pulsed Drain Current-Max (IDM):

    5 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTY2N100P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTY2N100P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • While IXTY2N100P is a fast-switching thyristor, it's not recommended for high-frequency switching applications above 1 kHz due to its limited dv/dt rating and potential for oscillation.
  • To ensure reliable operation of IXTY2N100P in high-temperature environments, it's essential to provide adequate heat sinking, maintain a safe operating junction temperature (Tj) below 125°C, and follow the recommended derating curves for voltage and current.
  • A recommended gate drive circuit for IXTY2N100P includes a gate resistor (Rg) of 1 kΩ to 10 kΩ, a gate capacitor (Cg) of 10 nF to 100 nF, and a gate voltage (Vg) of 10 V to 15 V, depending on the specific application requirements.
  • While it's possible to use IXTY2N100P in a parallel configuration, it's not recommended due to the potential for current imbalance and uneven stress on the devices, which can lead to reduced reliability and lifespan.

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IXTY2N100P Overview

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