Part Image

J112 - InterFET

Description: JFET N-Channel -35V Low Noise

Download J112 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
J112 - InterFET PCB footprint - Other - Other - TO-92_Master-5
click to zoom
3D Models
J112 - InterFET  - 3D model - Other - TO-92_Master-5
click to zoom

J112 Details

  • Manufacturer Part Number:

    J112

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SINGLE

  • Drain-source On Resistance-Max:

    50 Ω

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-226AA

  • JESD-30 Code:

    O-PBCY-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

J112 Frequently Asked Questions (FAQs)

  • The J112 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance and reliability.
  • To bias the J112 for linear operation, ensure that the gate-source voltage (Vgs) is between -2V to -5V, and the drain-source voltage (Vds) is between 10V to 20V. The drain current (Id) should be limited to 10mA to 20mA for linear operation.
  • The recommended gate resistor value for the J112 is between 1kΩ to 10kΩ. A higher value can help reduce power consumption, but may affect the switching speed.
  • Yes, the J112 can be used as a switch, but it's not recommended due to its relatively low current handling capability and high on-state resistance. For switching applications, consider using a MOSFET or a dedicated switch transistor.
  • To protect the J112 from ESD, use anti-static packaging, handling, and storage procedures. Ensure that the device is handled in a static-safe environment, and consider using ESD protection devices such as TVS diodes or ESD protection arrays.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

J112 Overview

Use the download button to access the J112 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search or try a keyword search, such as Other Transistors

Parts related to J112

Showing 0 results

J112 Alternates

Showing results

Image Part Number Model
Part Image J112,126 NXP Semiconductors

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92

Part Image J113D26Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

Part Image 934005280126 NXP Semiconductors

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92

Part Image J113 Micro Electronics Ltd

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

Part Image J113D27Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

For a full list of alternate parts for J112, check out Findchips.com