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J175 - InterFET

Description: JFET P-Channel 30V Low Noise

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PCB Footprints
J175 - InterFET PCB footprint - Other - Other - TO-92_Master-5
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3D Models
J175 - InterFET  - 3D model - Other - TO-92_Master-5
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J175 Details

  • Manufacturer Part Number:

    J175

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SINGLE

  • Drain-source On Resistance-Max:

    85 Ω

  • FET Technology:

    JUNCTION

  • JEDEC-95 Code:

    TO-226AA

  • JESD-30 Code:

    O-PBCY-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

J175 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the J175 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
  • To ensure the J175 is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the gate-source voltage (Vgs) and drain-source voltage (Vds) within the specified ranges, and ensuring the device is operated within the linear region of its characteristic curve.
  • The recommended PCB layout and thermal management for the J175 involve using a thermally efficient layout, such as a copper pour or thermal pad, to dissipate heat away from the device. It's also essential to ensure good airflow around the device and to use thermal interface materials (TIMs) to reduce thermal resistance.
  • To protect the J175 from electrostatic discharge (ESD), it's recommended to follow standard ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Additionally, incorporating ESD protection devices, such as TVS diodes or ESD protection arrays, into the circuit design can help prevent ESD damage.
  • The reliability and lifespan expectations for the J175 are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. As a general guideline, the J175 is designed to meet the reliability standards of the aerospace and defense industries, with a typical lifespan of 10-20 years or more in typical operating conditions.

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J175 Overview

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Part Image J177 Texas Instruments

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92

Part Image J176 Texas Instruments

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92

Part Image J177,126 NXP Semiconductors

Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-92

Part Image J176AMO NXP Semiconductors

Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-92

Part Image J176-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA

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