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J309 - InterFET

Description: JFET N-Channel -25V Low Noise

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PCB Footprints
J309 - InterFET PCB footprint - Other - Other - TO-92_Master-5
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3D Models
J309 - InterFET  - 3D model - Other - TO-92_Master-5
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J309 Details

  • Manufacturer Part Number:

    J309

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2.5 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-226AA

  • JESD-30 Code:

    O-PBCY-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

J309 Frequently Asked Questions (FAQs)

  • The J309 can operate safely up to 150°C, but it's recommended to derate the power dissipation above 25°C to ensure reliable operation.
  • To ensure stable operation, it's essential to provide a low-impedance source and a high-impedance load, and to use a bypass capacitor (e.g., 100 nF) between the gate and source pins to prevent oscillations.
  • The recommended gate-to-source voltage (Vgs) for the J309 is between -2.5 V and +2.5 V. Exceeding this range may cause damage to the device.
  • Yes, the J309 can be used as a switch, but it's essential to ensure that the gate-to-source voltage is sufficient to fully turn on the device (typically -2 V or more negative). Additionally, the drain-to-source voltage should be limited to prevent excessive power dissipation.
  • The J309 is sensitive to electrostatic discharge (ESD). To prevent damage, handle the device with ESD-protected equipment, and use ESD-protective packaging and storage materials.

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J309 Overview

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Part Image J309 Fairchild Semiconductor Corporation

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92

Part Image J309D74Z Fairchild Semiconductor Corporation

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92

Part Image J309 Solitron Devices Inc

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92

Part Image J309G onsemi

RF Small Signal Field-Effect Transistor

Part Image J309 Vishay Intertechnologies

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA

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