Part Image

Jan2N2907AUB - Microsemi Corporation

Description: Bipolar Transistors - BJT BJTs

Download Jan2N2907AUB Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
Jan2N2907AUB - Microsemi Corporation PCB footprint - Other - Other - Jan2N2907AUB-1
click to zoom
3D Models
Jan2N2907AUB - Microsemi Corporation  - 3D model - Other - Jan2N2907AUB-1
click to zoom

Jan2N2907AUB Details

  • Manufacturer Part Number:

    JAN2N2907AUB

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    SURFACE MOUNT PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-XDSO-N3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-19500/291M

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    300 ns

  • Turn-on Time-Max (ton):

    45 ns

Jan2N2907AUB Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the JAN2N2907AUB is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
  • Yes, the JAN2N2907AUB is a radiation-hardened device, designed to withstand the harsh conditions of space and other high-radiation environments.
  • The maximum power dissipation for the JAN2N2907AUB is 1.5 watts, although this can be affected by factors such as ambient temperature and thermal resistance.
  • Yes, the JAN2N2907AUB is designed for high-reliability applications, such as aerospace, defense, and industrial control systems, where failure is not an option.
  • The JAN2N2907AUB is a unique device with specific characteristics, but it is generally compatible with other N-channel power MOSFETs in terms of functionality and pinout.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

Jan2N2907AUB Overview

Use the download button to access the Jan2N2907AUB schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like Jan2N, or try a keyword search, such as RF Small Signal Bipolar Transistors

Parts related to Jan2N2907AUB

Showing 0 results

Jan2N2907AUB Alternates

Showing results

Image Part Number Model
Part Image 2N2907AUB/TR Microchip Technology Inc

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin

Part Image 2N2907ACSM-JQR-BG4 TT Electronics Resistors

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Part Image JANTXV2N2907AUB New England Semiconductor

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Part Image JAN2N2907AUB Sertech Laboratories Inc

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Part Image JANTX2N2907AUB Sertech Laboratories Inc

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

For a full list of alternate parts for Jan2N2907AUB, check out Findchips.com