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JANSR2N7584T1 - Infineon

Description: MOSFETs RH MOSFET 200V TO-254AA

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JANSR2N7584T1 Details

  • Manufacturer Part Number:

    JANSR2N7584T1

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    344 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-XSFM-P3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Qualified

  • Reference Standard:

    MIL-19500; RH - 100K Rad(Si)

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    115 ns

  • Turn-on Time-Max (ton):

    165 ns

JANSR2N7584T1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust cooling system. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature.
  • The high current rating of the JANSR2N7584T1 requires careful consideration of PCB trace width, thickness, and spacing to prevent overheating and ensure reliable operation. It's recommended to use a PCB design tool to simulate and optimize the design for high-current applications.
  • When selecting a gate driver for the JANSR2N7584T1, consider the device's gate charge, voltage rating, and switching frequency requirements. Infineon recommends using a gate driver with a high current capability, such as the Infineon 1EDC or 2EDC families, to ensure reliable operation and minimize switching losses.
  • To minimize EMI and EMC issues, follow best practices for PCB design, such as using a solid ground plane, minimizing loop areas, and using shielding or filtering components. Additionally, consider using a snubber circuit to reduce electromagnetic emissions during switching.

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JANSR2N7584T1 Overview

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