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JANTXV2N7225 - Infineon

Description: MOSFET

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JANTXV2N7225 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-254AA
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JANTXV2N7225 - Infineon  - 3D model - Transistor Outline, Vertical - TO-254AA
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JANTXV2N7225 Details

  • Manufacturer Part Number:

    JANTXV2N7225

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    27.4 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-MSFM-P3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Qualified

  • Reference Standard:

    MIL-19500/592

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

JANTXV2N7225 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the JANTXV2N7225 is -55°C to 175°C.
  • To ensure reliability, follow the recommended storage and handling procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a radiation-hardened version of the device if it will be exposed to radiation.
  • The JANTXV2N7225 has a radiation hardness assurance (RHA) level of QML-Q (Qualified Manufacturers List - Qualified) and is designed to meet the requirements of MIL-PRF-38535.
  • Yes, the JANTXV2N7225 can be used in non-radiation environments, but it is still a radiation-hardened device and may have a higher cost and lead time compared to commercial-grade devices.
  • The main difference is that the JANTXV2N7225 is a radiation-hardened device designed for high-reliability applications, whereas the commercial-grade 2N7225 is not designed for radiation environments.

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JANTXV2N7225 Overview

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Part Image IRFM250 TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image JANTXV2N7225 Omnirel Corp

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Part Image JANTX2N7225 Omnirel Corp

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image NESM250 Microsemi Corporation (now Microchip)

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