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JANTXV2N7227 - Infineon

Description: Trans MOSFET N-CH 400V 14A 3-Pin(3+Tab) TO-254AA

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PCB Footprints
JANTXV2N7227 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-254AA
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3D Models
JANTXV2N7227 - Infineon  - 3D model - Transistor Outline, Vertical - TO-254AA
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JANTXV2N7227 Details

  • Manufacturer Part Number:

    JANTXV2N7227

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.77

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.415 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-MSFM-P3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Qualified

  • Reference Standard:

    MIL-19500/592

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

JANTXV2N7227 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a large copper area connected to the drain pin, and to use thermal vias to dissipate heat to the bottom layer of the PCB. Additionally, keeping the component placement and routing symmetrical can help to reduce thermal gradients.
  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings in the datasheet. Also, use a suitable gate driver circuit to provide a stable voltage supply and to minimize ringing and oscillations. Additionally, consider using a gate resistor to slow down the turn-on and turn-off times to reduce electromagnetic interference (EMI).
  • When paralleling multiple JANTXV2N7227 devices, it's essential to ensure that each device has its own gate driver and that the gate signals are properly synchronized. Also, consider using a common source inductor to reduce current imbalance between devices. Additionally, make sure to follow the recommended layout and thermal management guidelines to minimize thermal gradients and ensure even current sharing.
  • To protect the device from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage across the device. Additionally, use a current sense resistor and a comparator to monitor the current and shut down the device in case of an overcurrent condition. Also, make sure to follow the recommended safe operating area (SOA) guidelines to prevent device damage.
  • When using the JANTXV2N7227 in a high-reliability application, consider using a redundant design to ensure continued operation in case of a device failure. Also, follow the recommended derating guidelines to reduce the stress on the device and increase its lifespan. Additionally, consider using a radiation-hardened or high-reliability version of the device, and follow the recommended testing and screening procedures to ensure the device meets the required reliability standards.

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JANTXV2N7227 Overview

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Part Image IRFM350-JQR-BR1 TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image IRFM350R1 TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image JANTX2N7227 Infineon Technologies AG

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image IRFM350PBF International Rectifier

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image JANTX2N7227 Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

For a full list of alternate parts for JANTXV2N7227, check out Findchips.com