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KBJ2510G - GeneSiC Semiconductor

Description: Bridge Rectifiers 1000V 25A Bridge Rectifier

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PCB Footprints
KBJ2510G - GeneSiC Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - KBJ
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3D Models
KBJ2510G - GeneSiC Semiconductor  - 3D model - Transistor Outline, Vertical - KBJ
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KBJ2510G Details

  • Manufacturer Part Number:

    KBJ2510G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

  • Breakdown Voltage-Min:

    1000 V

  • Configuration:

    BRIDGE, 4 ELEMENTS

  • Diode Type:

    BRIDGE RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.05 V

  • Non-rep Pk Forward Current-Max:

    350 A

  • Number of Elements:

    4

  • Number of Phases:

    1

  • Operating Temperature-Max:

    125 °C

  • Output Current-Max:

    25 A

  • Rep Pk Reverse Voltage-Max:

    1000 V

  • Surface Mount:

    NO

KBJ2510G Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal pad connected to a large copper area on the bottom layer is recommended. This helps to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, consider derating the device's current rating at high temperatures.
  • The device can withstand voltage transients up to 1.5 times the maximum rated voltage for a duration of 100ms. However, it's recommended to use a TVS diode or a voltage clamp to protect the device from voltage spikes.
  • Yes, but it's crucial to ensure that the devices are matched in terms of their electrical characteristics, and that the current sharing is balanced. A common gate drive and a shared heat sink can help achieve this.
  • Handle the device with an ESD wrist strap or mat, and ensure that the PCB has ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.

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KBJ2510G Overview

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