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KSA1381ESTU - onsemi

Description: High Voltage : VCEO = -300 V; Excellent Gain Linearity for low THD; Low Reverse Transfer Capacitance : Cre = 2.3 pF at VCB = -30 V; Full thermal and electrical Spice models are available ; High Frequency: 150 MHz; Complement to 2SC3503/KSC3503

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PCB Footprints
KSA1381ESTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-126ML
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3D Models
KSA1381ESTU - onsemi  - 3D model - Transistor Outline, Vertical - TO-126ML
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KSA1381ESTU Details

  • Manufacturer Part Number:

    KSA1381ESTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-126-3

  • Manufacturer Package Code:

    340AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    7 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    150 MHz

KSA1381ESTU Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are also recommended.
  • Use a decoupling capacitor (e.g., 10uF) close to the device and ensure a low-impedance power supply to minimize voltage drops.
  • The maximum power dissipation is 1.4W. Ensure that the device operates within this limit to prevent overheating and damage.
  • The KSA1381ESTU is rated for operation up to 150°C. However, derating is required for temperatures above 125°C. Consult the datasheet for specific derating guidelines.
  • Use ESD protection devices (e.g., TVS diodes) and follow proper handling and storage procedures to prevent ESD damage.

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KSA1381ESTU Overview

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Part Image KSA1381ES Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSA1381ESTSSTU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin