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KSC945GTA - onsemi

Description: Last Shipments - NPN Epitaxial Silicon Transistor

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KSC945GTA - onsemi PCB footprint - Other - Other - TO−92 3 CASE 135AR ISSUE O
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KSC945GTA - onsemi  - 3D model - Other - TO−92 3 CASE 135AR ISSUE O
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KSC945GTA Details

  • Manufacturer Part Number:

    KSC945GTA

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92-3 LF

  • Package Description:

    TO-92, 3 PIN

  • Manufacturer Package Code:

    135AR

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    300 MHz

KSC945GTA Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the KSC945GTA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the KSC945GTA is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is between 0.6V to 0.8V, and the collector-emitter voltage (Vce) is at least 1V. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • For optimal thermal performance, it is recommended to use a PCB layout with a large copper area for heat dissipation, and to use thermal vias to connect the copper area to the device's thermal pad. Additionally, a heat sink or thermal interface material can be used to further improve heat dissipation.
  • To protect the KSC945GTA from electrostatic discharge (ESD), it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.
  • The KSC945GTA should be stored in a dry, cool place away from direct sunlight and moisture. When handling the device, it is recommended to use anti-static wrist straps, mats, or other ESD protection devices to prevent ESD damage.

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KSC945GTA Overview

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Part Image KSC945GTA Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92