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KSD882YSTU - onsemi

Description: Complement to KSB772; Audio Frequency Power Amplifier Low Speed Switching

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PCB Footprints
KSD882YSTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-126-3
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3D Models
KSD882YSTU - onsemi  - 3D model - Transistor Outline, Vertical - TO-126-3
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KSD882YSTU Details

  • Manufacturer Part Number:

    KSD882YSTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-126-3

  • Package Description:

    TO-126, 3 PIN

  • Manufacturer Package Code:

    340AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    3 A

  • Collector-Base Capacitance-Max:

    45 pF

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    10 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    90 MHz

  • VCEsat-Max:

    0.5 V

KSD882YSTU Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to facilitate heat dissipation.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure proper PCB design, component selection, and soldering to prevent thermal stress and moisture ingress.
  • Use a shielded enclosure, ensure proper PCB layout and grounding, and implement EMI filters or chokes on input and output lines. Follow onsemi's recommended layout and component selection guidelines.
  • Implement a low-power mode by disabling unnecessary circuits, using a low-dropout regulator, and optimizing the power supply design. Consider using a power management IC to minimize standby power consumption.
  • Follow onsemi's recommended test procedures, including characterization of electrical parameters, thermal performance, and reliability testing. Use industry-standard test equipment and follow proper measurement techniques.

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KSD882YSTU Overview

Use the download button to access the KSD882YSTU schematic symbol, PCB footprint, and 3D model.
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KSD882YSTU Alternates

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Image Part Number Model
Part Image KSD882YSTUY onsemi

Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSD882YS Rochester Electronics LLC

3000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126, LEAD FREE, TO-126, 3 PIN

Part Image KSD882YS Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126

Part Image KSD882YSTU Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126

Part Image KSD882YS onsemi

Power Bipolar Transistor

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