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KSP10TA - onsemi

Description: Bipolar Transistors - BJT NPN Si Transistor Epitaxial

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KSP10TA - onsemi PCB footprint - Other - Other - KSP10TA-2
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KSP10TA Details

  • Manufacturer Part Number:

    KSP10TA

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92-3 LF

  • Manufacturer Package Code:

    135AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector-Base Capacitance-Max:

    0.7 pF

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    650 MHz

  • VCEsat-Max:

    0.5 V

KSP10TA Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the KSP10TA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the KSP10TA is properly biased for linear operation, the base-emitter voltage (VBE) should be set between 0.6V to 0.8V, and the collector-emitter voltage (VCE) should be set to at least 1V to 2V above the supply voltage. Additionally, the base current should be limited to prevent overheating.
  • For optimal thermal performance, the KSP10TA should be mounted on a PCB with a large copper area (e.g., a copper pour) connected to the collector pin. A thermal via or thermal pad can also be used to improve heat dissipation. Additionally, the PCB should be designed to minimize thermal resistance and ensure good airflow around the device.
  • Yes, the KSP10TA can be used in a switching application, but it is not optimized for high-frequency switching. The device's switching speed is limited by its transition frequency (ft) of around 30 MHz. Additionally, the device's collector-emitter saturation voltage (VCE(sat)) should be considered when designing the switching circuit.
  • To protect the KSP10TA from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, on the input and output pins. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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KSP10TA Overview

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