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KSP42TA - onsemi

Description: Collector Dissipation : PC = 625mW Amplifier Transistor; Collector-Emitter Voltage : VCEO= KSP43: 200V; Collector-Emitter Voltage : VCEO= KSP42: 300V

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KSP42TA - onsemi PCB footprint - Other - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2
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KSP42TA - onsemi  - 3D model - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2
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KSP42TA Details

  • Manufacturer Part Number:

    KSP42TA

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92-3 LF

  • Manufacturer Package Code:

    135AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.625 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

KSP42TA Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the KSP42TA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be within the boundaries of VCE = 40V, IC = 10A, and Ptot = 100W.
  • To ensure the KSP42TA is properly biased for linear operation, the base-emitter voltage (VBE) should be around 0.65-0.7V, and the collector-emitter voltage (VCE) should be around 1-2V. The base current (IB) should be limited to 1-2mA to avoid saturation.
  • For optimal thermal management, the KSP42TA should be mounted on a heat sink with a thermal resistance of around 1-2°C/W. The PCB layout should ensure good thermal conductivity and minimal thermal resistance between the device and the heat sink. A copper pour or thermal vias can be used to improve heat dissipation.
  • To protect the KSP42TA from electrostatic discharge (ESD), it is recommended to use ESD protection devices such as TVS diodes or ESD suppressors in the circuit. Additionally, handling the device with anti-static wrist straps, mats, or bags can prevent ESD damage.
  • The KSP42TA should be stored in a dry, cool place away from direct sunlight and moisture. The device should be handled with clean, dry gloves and anti-static materials to prevent ESD damage. The device should not be exposed to temperatures above 150°C or below -40°C during storage or handling.

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KSP42TA Overview

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KSP42TA Alternates

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Image Part Number Model
Part Image KSP42BU_NL Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image KSP42IUTA Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image KSP42 Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image KSP42IUBU Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image KSP42ABU Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

For a full list of alternate parts for KSP42TA, check out Findchips.com