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LMC660CM - Texas Instruments

Description: LMC660CM

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LMC660CM Details

  • Manufacturer Part Number:

    LMC660CM

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC

  • Package Description:

    PLASTIC, MS-012AB, SOIC-14

  • Pin Count:

    14

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Date Of Intro:

    1989-01-01

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    0

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Architecture:

    VOLTAGE-FEEDBACK

  • Average Bias Current-Max (IIB):

    0.000002 µA

  • Bias Current-Max (IIB) @25C:

    0.000002 µA

  • Common-mode Reject Ratio-Min:

    63 dB

  • Common-mode Reject Ratio-Nom:

    83 dB

  • Frequency Compensation:

    YES

  • Input Offset Current-Max (IIO):

    0.000001 µA

  • Input Offset Voltage-Max:

    3000 µV

  • JESD-30 Code:

    R-PDSO-G14

  • JESD-609 Code:

    e0

  • Length:

    8.65 mm

  • Low-Bias:

    YES

  • Low-Offset:

    NO

  • Micropower:

    YES

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    4

  • Number of Terminals:

    14

  • Operating Temperature-Max:

    70 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP14,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TUBE

  • Peak Reflow Temperature (Cel):

    235

  • Power:

    NO

  • Programmable Power:

    NO

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.75 mm

  • Slew Rate-Min:

    0.7 V/us

  • Slew Rate-Nom:

    1.1 V/us

  • Subcategory:

    Operational Amplifier

  • Supply Current-Max:

    2.2 mA

  • Supply Voltage Limit-Max:

    16 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Unity Gain BW-Nom:

    1400

  • Voltage Gain-Min:

    40000

  • Wideband:

    NO

  • Width:

    3.9 mm

LMC660CM Frequently Asked Questions (FAQs)

  • The maximum power dissipation of the LMC660CM is 670mW, which is calculated based on the maximum junction temperature (TJ) of 150°C and the thermal resistance (θJA) of 125°C/W.
  • To ensure stability, it's essential to follow proper compensation techniques, such as adding a capacitor in parallel with the feedback resistor to reduce the gain-bandwidth product. Additionally, ensure that the feedback loop has a sufficient phase margin to prevent oscillations.
  • For optimal performance, use a star-grounding technique, where all grounds are connected to a single point. Keep the input and output traces short and away from noise sources. Use a ground plane to reduce electromagnetic interference (EMI) and ensure that the op-amp is decoupled from the power supply using capacitors.
  • While the LMC660CM can be used as a comparator, it's not the most suitable choice due to its relatively slow slew rate (0.5V/μs) and limited bandwidth (1.4MHz). For comparator applications, consider using a dedicated comparator IC, such as the LM339 or LM2901.
  • To protect the LMC660CM from electrostatic discharge (ESD), use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Ensure that the PCB layout and handling procedures minimize the risk of ESD damage.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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