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LPV542DGKR - Texas Instruments

Description: Nanopower, 480 nA, 1.6 V RRIO Dual, CMOS input op amp

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LPV542DGKR - Texas Instruments PCB footprint - Small Outline Packages - Small Outline Packages - DGK
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LPV542DGKR - Texas Instruments  - 3D model - Small Outline Packages - DGK
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LPV542DGKR Details

  • Manufacturer Part Number:

    LPV542DGKR

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Architecture:

    VOLTAGE-FEEDBACK

  • Average Bias Current-Max (IIB):

    0.000001 µA

  • Bias Current-Max (IIB) @25C:

    0.000001 µA

  • Common-mode Reject Ratio-Min:

    73 dB

  • Common-mode Reject Ratio-Nom:

    101 dB

  • Frequency Compensation:

    YES

  • Input Offset Voltage-Max:

    3000 µV

  • JESD-30 Code:

    S-PDSO-G8

  • JESD-609 Code:

    e4

  • Length:

    3 mm

  • Low-Bias:

    YES

  • Low-Offset:

    NO

  • Micropower:

    YES

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Power:

    NO

  • Programmable Power:

    NO

  • Seated Height-Max:

    1.1 mm

  • Slew Rate-Nom:

    0.0037 V/us

  • Subcategory:

    Operational Amplifier

  • Supply Current-Max:

    0.0017 mA

  • Supply Voltage Limit-Max:

    6 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    8

  • Voltage Gain-Min:

    35481.339

  • Wideband:

    NO

  • Width:

    3 mm

LPV542DGKR Frequently Asked Questions (FAQs)

  • Texas Instruments recommends a star-grounding layout, with the analog and digital grounds separated and connected at a single point. Additionally, keep the input and output traces short and away from each other to minimize noise coupling.
  • Use a high-quality, low-ESR capacitor (e.g., 10uF ceramic) for power supply decoupling, and place it as close to the device as possible. Ensure the power supply voltage is within the recommended range (2.7V to 5.5V) and use a low-dropout regulator if necessary.
  • The recommended input impedance is 1kΩ to 10kΩ. A higher input impedance can lead to reduced bandwidth and increased noise, while a lower input impedance can cause increased power consumption and reduced output swing.
  • To maximize current drive capability, use a low-impedance output stage (e.g., 100Ω to 200Ω) and ensure the output is properly terminated. Additionally, consider using an external current-boosting transistor or a buffer stage if high current drive is required.
  • The LPV542DGKR has a maximum junction temperature of 150°C. Ensure good thermal conduction by using a heat sink or thermal pad, and avoid operating the device near its maximum power dissipation. Monitor the device's temperature and adjust the operating conditions accordingly.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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