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MBQ60T65PESTH - MagnaChip

Description: High Speed Field stop Trench IGBT Second Generation,650 V,535 W -55~150 °C

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PCB Footprints
MBQ60T65PESTH - MagnaChip PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247
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MBQ60T65PESTH Details

  • Manufacturer Part Number:

    MBQ60T65PESTH

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    MagnaChip Semiconductor Ltd

  • YTEOL:

    5.35

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    535 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    187 ns

  • Turn-on Time-Nom (ton):

    103 ns

  • VCEsat-Max:

    2.4 V

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MBQ60T65PESTH Overview

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