Description:Lower forward voltage; Lower leakage current in high temperature; Small junction capacitance; High avalanche energy capability; Alternative solution on SMC and DPAK package
A good PCB layout for optimal thermal performance involves placing the device on a thick copper plane, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components. A 2-3 oz copper thickness is recommended. Refer to onsemi's application note AND9093/D for more details.
To ensure reliable operation at high temperatures, follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Also, consider derating the device's power handling capability at higher temperatures.
The maximum allowable voltage stress on the MBR30170MFST3G is 1.5 times the rated voltage (Vr) for a maximum duration of 100 ms. Exceeding this limit may cause damage to the device.
Yes, you can use multiple MBR30170MFST3G devices in parallel to increase current handling. However, ensure that the devices are properly matched, and the current sharing is balanced to avoid overheating and reduce reliability.
Store the MBR30170MFST3G in a dry, cool place with a relative humidity of 50% or less. Avoid storing the device in a sealed plastic bag or airtight container, as this can cause moisture to become trapped and lead to reliability issues.
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MBR30170MFST3G Overview
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