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MBR30H30CTG - onsemi

Description: Low Forward Voltage; Low Power Loss/High Efficiency; High Surge Capacity; 150°C Operating Junction Temperature; 30A Total (15A Per Diode Leg); GuardRing for Stress Protection; AEC-Q101 Qualified and PPAP Capable; These are Pb-Free Packages; NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

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PCB Footprints
MBR30H30CTG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3 10.10x15.12x4.45, 2.54P
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MBR30H30CTG - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3 10.10x15.12x4.45, 2.54P
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MBR30H30CTG Details

  • Manufacturer Part Number:

    MBR30H30CTG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4.68

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    30 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.4 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    260 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    15 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    800 µA

  • Reverse Test Voltage:

    30 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

MBR30H30CTG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBR30H30CTG is -55°C to 150°C.
  • To ensure proper biasing, connect the anode to a voltage source and the cathode to ground. The recommended bias voltage is 30V, but it can operate up to 40V.
  • The maximum current rating for the MBR30H30CTG is 30A.
  • Use a voltage regulator to limit the voltage to 40V or less, and consider adding a current limiter or fuse to prevent overcurrent conditions.
  • Yes, the MBR30H30CTG can be used in switching applications, but ensure that the switching frequency is within the recommended range (up to 100 kHz) and that the device is properly biased.

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MBR30H30CTG Overview

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Part Image FST3230 Microchip Technology Inc

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 30V V(RRM), Silicon, TO-220AB