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MBR35100 - GeneSiC Semiconductor

Description: Schottky Diodes & Rectifiers 100V - 35A Schottky Rectifier

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MBR35100 - GeneSiC Semiconductor  - 3D model
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MBR35100 Details

  • Manufacturer Part Number:

    MBR35100

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    5

  • Application:

    POWER

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.84 V

  • JEDEC-95 Code:

    DO-203AA

  • JESD-30 Code:

    O-MUPM-D1

  • Non-rep Pk Forward Current-Max:

    600 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    1

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    35 A

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    Post / Stud Mount

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    1500 µA

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    SOLDER LUG

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

MBR35100 Frequently Asked Questions (FAQs)

  • GeneSic recommends a 2-layer PCB with a thermal pad on the bottom side, and a heat sink with a thermal interface material (TIM) for efficient heat dissipation. A minimum of 2 oz copper thickness is recommended for the PCB.
  • Follow the recommended operating conditions, ensure proper PCB layout and routing, use a suitable heat sink, and implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits. Additionally, use a TVS diode for electrostatic discharge (ESD) protection.
  • A gate driver with a high current capability (e.g., 2A) and a low output impedance is recommended. A bootstrap circuit can be used to generate the gate drive voltage. Ensure the gate drive circuit is properly decoupled and filtered to minimize noise and ringing.
  • Use a low-inductance PCB layout, minimize the gate drive loop inductance, and ensure proper decoupling of the power supply. A high-frequency capable gate driver and a low-ESR output capacitor are also recommended. Additionally, consider using a snubber circuit to reduce ringing and overshoot.
  • Use a curve tracer or a high-power semiconductor parameter analyzer to characterize the device. For dynamic characterization, use a double-pulse tester or a high-frequency switching test setup. Ensure proper probing and measurement techniques to minimize measurement errors.

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MBR35100 Overview

Use the download button to access the MBR35100 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MBR35, or try a keyword search, such as Rectifier Diodes

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Part Image MBR35100 Digitron Semiconductors

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Part Image MBR35100 America Semiconductor LLC

Rectifier Diode, Schottky, 1 Phase, 1 Element, 35A, 100V V(RRM), Silicon, DO-4