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MBR8170TFSTWG - onsemi

Description: Lower forward voltage; Lower leakage current in high temperature; Small junction capacitance; High avalanche energy capability; Alternative solution on SMA and SMB package

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MBR8170TFSTWG - onsemi  - 3D model
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MBR8170TFSTWG Details

  • Manufacturer Part Number:

    MBR8170TFSTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    6.22

  • Additional Feature:

    FREE WHEELING DIODE, LOW LEAKAGE CURRENT

  • Application:

    GENERAL PURPOSE

  • Breakdown Voltage-Min:

    170 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.89 V

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    140 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    170 V

  • Reverse Current-Max:

    30 µA

  • Reverse Test Voltage:

    170 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MBR8170TFSTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for the MBR8170TFSTWG should include a solid copper plane on the bottom layer for heat dissipation, and vias should be placed under the device to connect the thermal pad to the copper plane. Additionally, the PCB should be designed to minimize thermal resistance and ensure good airflow.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). The device should be mounted on a heat sink, and the PCB should be designed to minimize thermal resistance. Additionally, the device should be derated according to the temperature derating curve provided in the datasheet.
  • The recommended soldering profile for the MBR8170TFSTWG is a peak temperature of 260°C (500°F) for a maximum of 10 seconds, with a ramp-up rate of 3°C/s (5.4°F/s) and a ramp-down rate of 6°C/s (10.8°F/s). It's essential to follow the recommended soldering profile to prevent damage to the device.
  • To protect the MBR8170TFSTWG from electrical overstress (EOS), it's essential to follow proper handling and storage procedures, including using anti-static wrist straps and mats. The device should be connected to a circuit with proper voltage and current limiting, and the PCB should be designed with adequate clearance and creepage distances to prevent electrical arcing.
  • The recommended storage condition for the MBR8170TFSTWG is in a dry, cool place with a temperature range of -40°C to 125°C (-40°F to 257°F) and a relative humidity of 60% or less. The device should be stored in its original packaging or in a sealed bag with desiccant to prevent moisture absorption.

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MBR8170TFSTWG Overview

Use the download button to access the MBR8170TFSTWG 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MBR81, or try a keyword search, such as Rectifier Diodes

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