MBRAD10200H footprint, schematic symbol and 3D model by Taiwan Semiconductor

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MBRAD10200H - Taiwan Semiconductor PCB footprint - Other - Other - MBRAD10200H-1

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Datasheet Download Datasheet
Stock & Prices Price & Stock for MBRAD10200H
Part Number MBRAD10200H
Manufacturer Taiwan Semiconductor
Pin Count 3
Part Category Schottky Diode
Package Category Other
Footprint Name Other - MBRAD10200H-1
Released Date Oct 9, 2023
Last Modified Date Oct 9, 2023 10:24 AM UTC
Pinout / Pin List Click Here (Member Only)

MBRAD10200H Details

Manufacturer Part Number:
MBRAD10200H
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
DPAK-2
Country Of Origin:
Mainland China
ECCN Code:
EAR99
HTS Code:
8541.10.00.80
Factory Lead Time:
12 Weeks
Manufacturer:
Taiwan Semiconductor
YTEOL:
7
Additional Feature:
FREE WHEELING DIODE, LOW POWER LOSS
Application:
EFFICIENCY
Case Connection:
CATHODE
Configuration:
SINGLE
Diode Element Material:
SILICON
Diode Type:
RECTIFIER DIODE
Forward Voltage-Max (VF):
0.88 V
JEDEC-95 Code:
TO-252AE
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Non-rep Pk Forward Current-Max:
200 A
Number of Elements:
1
Number of Phases:
1
Number of Terminals:
2
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Output Current-Max:
10 A
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Reference Standard:
AEC-Q101
Rep Pk Reverse Voltage-Max:
200 V
Reverse Current-Max:
10 µA
Reverse Test Voltage:
200 V
Surface Mount:
YES
Technology:
SCHOTTKY
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
SINGLE

MBRAD10200H Frequently Asked Questions (FAQs)

A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern on the PCB are also recommended.
Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended operating conditions and derating guidelines.
The maximum surge current rating is not explicitly stated in the datasheet, but it's typically around 2-3 times the maximum repetitive peak current rating (Irp) for a short duration (e.g., 10ms). Consult with Taiwan Semiconductor or a qualified engineer for specific guidance.
Yes, but be aware of the device's switching characteristics, such as trr (rise time) and tf (fall time), to ensure it meets your application's requirements. Additionally, consider the effects of high-frequency switching on the device's thermal performance and electromagnetic interference (EMI).
The recommended gate drive voltage is typically between 10V to 15V, but it may vary depending on the specific application and required switching performance. Consult with Taiwan Semiconductor or a qualified engineer for specific guidance.

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