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MBRB20H100CTT4G - onsemi

Description: Low Forward Voltage: 0.64 V @ 125C; Low Power Loss/High Efficiency; High Surge Capacity; 175C Operating Junction Temperature; 20 A Total (10 A Per Diode Leg); Guard-Ring for Stress Protection; Pb-Free Package is Available Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94, V-0 @ 0.125 in; Weight: Approximately 1.9 grams; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds; AEC-Q101 Qua

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MBRB20H100CTT4G - onsemi PCB footprint - Other - Other - D2PAK 3 CASE 418B−04 ISSUE L
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MBRB20H100CTT4G - onsemi  - 3D model - Other - D2PAK 3 CASE 418B−04 ISSUE L
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MBRB20H100CTT4G Details

  • Manufacturer Part Number:

    MBRB20H100CTT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK 2 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.38

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.88 V

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    250 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    4.5 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

MBRB20H100CTT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBRB20H100CTT4G is -55°C to 150°C.
  • The typical forward voltage drop for the MBRB20H100CTT4G is around 0.8V to 1.2V, depending on the current and temperature.
  • Yes, the MBRB20H100CTT4G is suitable for high-frequency switching applications due to its low reverse recovery time (trr) of around 30ns.
  • The maximum repetitive peak reverse voltage (VRRM) for the MBRB20H100CTT4G is 100V.
  • Yes, the MBRB20H100CTT4G is RoHS (Restriction of Hazardous Substances) compliant, meaning it meets the EU's directive on the restriction of certain hazardous substances in electrical and electronic equipment.

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MBRB20H100CTT4G Overview

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Part Image MBRB20H100CTHE3/81 Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-263AB

Part Image MBRB20H100CT-E3/81 Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-263AB

Part Image MBRB20H100CT-E3/45 Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-263AB

Part Image NRVBB20H100CTT4G onsemi

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon

Part Image MB20H100CTHE3_A/P Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-263AB

For a full list of alternate parts for MBRB20H100CTT4G, check out Findchips.com