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MBRM2H100T3G - onsemi

Description: DIODE SCHOTTKY 100V 2A POWERMITE

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MBRM2H100T3G - onsemi PCB footprint - Other - Other - MBRM2H100T3G-3
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MBRM2H100T3G - onsemi  - 3D model - Other - MBRM2H100T3G-3
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MBRM2H100T3G Details

  • Manufacturer Part Number:

    MBRM2H100T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    POWERMITE

  • Package Description:

    POWERMITE-2

  • Pin Count:

    2

  • Manufacturer Package Code:

    457-04

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.07

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.84 V

  • JEDEC-95 Code:

    DO-216AA

  • JESD-30 Code:

    R-PSSO-G1

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    1

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    20 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

MBRM2H100T3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBRM2H100T3G is -55°C to 150°C.
  • To ensure reliability, follow the recommended assembly and soldering procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a thermal management strategy to keep the device within its recommended operating temperature range.
  • The recommended PCB layout for the MBRM2H100T3G involves using a thermal pad and thermal vias to dissipate heat. A heat sink or thermal interface material can also be used to improve thermal performance. Consult the onsemi application note for more detailed guidance.
  • When designing with the MBRM2H100T3G, ensure that the device is operated within its specified voltage rating (100V) and that the PCB layout and component selection can withstand the high voltage. Consider using voltage-dependent resistors and capacitors, and ensure that the design meets relevant safety standards.
  • The MBRM2H100T3G has built-in ESD protection, but it is still important to follow proper ESD handling procedures during assembly and testing. To prevent latch-up, ensure that the device is operated within its specified voltage and current ratings, and avoid applying excessive voltage or current to the device.

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MBRM2H100T3G Overview

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Part Image NRVBM2H100T3G onsemi

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-216AA