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NRVBM2H100T3G - onsemi

Description: Low VF Provides Higher Efficiency and Extends Battery Life; Low Profile - Maximum Height of 1.1 mm; Small Footprint - Footprint Area of 8.45 mm2; Supplied in 12 mm Tape and Reel; Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Mechanical Characteristics:; Powermite® is JEDEC Registered as DO-216AA; Case: Molded Epoxy; Epoxy Meets UL94V-0 at 0.125 in; Weight: 16.3 mg (Approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds

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NRVBM2H100T3G Details

  • Manufacturer Part Number:

    NRVBM2H100T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    POWERMITE-2

  • Manufacturer Package Code:

    457-04

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.07

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.84 V

  • JEDEC-95 Code:

    DO-216AA

  • JESD-30 Code:

    R-PSSO-G1

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    1

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    20 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVBM2H100T3G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an internal or bottom-side copper plane.
  • The device requires a stable input voltage (VIN) and a proper biasing of the gate driver (VCC) to ensure optimal performance. A decoupling capacitor should be placed close to the device to filter out noise and ensure stable operation.
  • Critical timing parameters include the turn-on and turn-off times, rise and fall times, and the dead time. These parameters impact system performance by affecting the device's switching frequency, efficiency, and electromagnetic interference (EMI).
  • Overvoltage protection can be achieved using a transient voltage suppressor (TVS) or a zener diode. Overcurrent protection can be achieved using a current sense resistor and a comparator or an overcurrent protection IC.
  • The device has a maximum junction temperature (TJ) of 150°C. Thermal management considerations include providing a heat sink, using a thermal interface material, and ensuring good airflow around the device.

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NRVBM2H100T3G Overview

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