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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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NRVBM130LT1G
onsemi
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1 | Low Profile - Maximum Height of 1.1 mm; Small Footprint - Footprint Area of 8.45 mm2; Low VF Provides Higher Efficiency and Extends battery Life; Supplied in 12 mm Tape and Reel; Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Mechanical Characteristics:; Powermite is JEDEC Registered as DO-216AA; Case: Molded Epoxy; Epoxy Meets UL94V-0 at 1/8"; Weight: 62 mg (approximately); Device Marking: BCG; Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum | Other | NRVBM130LT1G |
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NRVBM120LT1G
onsemi
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1 | Diode Schottky 20V 1A Automotive 2-Pin(1+Tab) Power Mite T/R | Other | NRVBM120LT1G |
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NRVBM120LT3G
onsemi
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1 | Schottky Diodes & Rectifiers SURFACE MOUNT PWRMIT E | Other | NRVBM120LT3G |
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NRVBM110LT1G
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 10V V(RRM), Silicon, DO-216AA | NRVBM110LT1G |
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NRVBM110ET1G
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 10V V(RRM), Silicon, DO-216AA | NRVBM110ET1G |
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NRVBM120ET3G
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA | NRVBM120ET3G |
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NRVBM140T3G
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 40V V(RRM), Silicon, DO-216AA | NRVBM140T3G |
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NRVBM120ET1G
onsemi
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1 | Low Profile - Maximum Height of 1.1 mm; Small Footprint - Footprint Area of 8.45 mm2; Low VF Provides Higher Efficiency and Extends Battery Life; Supplied in 12 mm Tape and Reel; Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Mechanical Characteristics:; Powermite is JEDEC Registered as DO-216AA; Case: Molded Epoxy; Epoxy Meets UL94V-0 at 1/8"; Weight: 62 mg (approximately); Device Marking: BCV; Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum | NRVBM120ET1G |
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NRVBM140T1G
onsemi
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1 | 1.0 A, 40 V, Schottky Power Rectifier, Surface Mount | NRVBM140T1G |
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NRVBM130LT3G
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-216AA | NRVBM130LT3G |
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NRVBM110LT3G
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 10V V(RRM), Silicon, DO-216AA | NRVBM110LT3G |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NRVBM2H100T3G
onsemi
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1 | Low VF Provides Higher Efficiency and Extends Battery Life; Low Profile - Maximum Height of 1.1 mm; Small Footprint - Footprint Area of 8.45 mm2; Supplied in 12 mm Tape and Reel; Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Mechanical Characteristics:; Powermite® is JEDEC Registered as DO-216AA; Case: Molded Epoxy; Epoxy Meets UL94V-0 at 0.125 in; Weight: 16.3 mg (Approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds | NRVBM2H100T3G |
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