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MC74VHC86DR2G - onsemi

Description: Latchup Performance Exceeds 300mA; ESD Performance: HBM > 2000V; Machine Model > 200V; Designed for 2V to 5.5V Operating Range; Power Down Protection Provided on Inputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Low Power Dissipation: ICC = 2µA (Max) at TA = 25 C; Chip Complexity: 56 FETs or 14 Equivalent Gates; High Noise Immunity: VNIH = VNIL = 28% VCC; High Speed: tPD = 4.8ns (Typ) at VCC = 5V; Low Noise: VOLP = 0.8V (Max); These devices are available in

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MC74VHC86DR2G Overview

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Part Image TC74VHC86FN Toshiba America Electronic Components

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