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MG250YD2YMS3 - Toshiba

Description: SiC MOSFET Module, 2200V, 250A

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MG250YD2YMS3 - Toshiba  - 3D model
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MG250YD2YMS3 Details

  • Manufacturer Part Number:

    MG250YD2YMS3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MODULE-12

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • DS Breakdown Voltage-Min:

    2200 V

  • Drain Current-Max (ID):

    250 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XUFM-X12

  • Number of Elements:

    2

  • Number of Terminals:

    12

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2000 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    YES

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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MG250YD2YMS3 Overview

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