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MGD3160AM535EK - NXP

Description: Half Bridge Driver DC-DC Converters Power MOSFET, IGBT 32-SOIC

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MGD3160AM535EK - NXP PCB footprint - Small Outline Packages - Small Outline Packages - SOT1762-1
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MGD3160AM535EK - NXP  - 3D model - Small Outline Packages - SOT1762-1
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MGD3160AM535EK Details

  • Manufacturer Part Number:

    MGD3160AM535EK

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOIC-32

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.01

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    11

  • High Side Driver:

    YES

  • Interface IC Type:

    BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G32

  • Length:

    11 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    32

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Peak Current Limit-Nom:

    15 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SSOP

  • Package Equivalence Code:

    SSOP32,.4

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, SHRINK PITCH

  • Peak Reflow Temperature (Cel):

    260

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    2.65 mm

  • Supply Voltage-Max:

    40 V

  • Supply Voltage-Min:

    4.5 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Turn-on Time:

    0.15 µs

  • Width:

    7.5 mm

MGD3160AM535EK Frequently Asked Questions (FAQs)

  • NXP provides a recommended PCB layout and thermal management guide in their application note AN11542, which includes guidelines for thermal pad connection, heat sink design, and PCB layer stack-up.
  • Optimizing the gate driver circuit involves selecting the right gate resistor value, ensuring proper PCB layout, and using a suitable gate drive voltage. NXP's application note AN11543 provides detailed guidelines for gate driver optimization.
  • NXP recommends using a high-frequency oscilloscope, a current probe, and a thermal imaging camera to characterize the device. Additionally, a double-pulse tester can be used to evaluate the device's switching performance.
  • To ensure EMC and EMI compliance, follow NXP's guidelines for PCB layout, shielding, and filtering. Additionally, consider using a common-mode choke and a shielded enclosure to minimize emissions.
  • NXP performs a range of reliability and qualification tests, including high-temperature operating life (HTOL), temperature humidity bias (THB), and electrostatic discharge (ESD) testing, to ensure the device meets industry standards for reliability and robustness.

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MGD3160AM535EK Overview

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About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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